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Cited by. Year. Defects engineering induced room temperature ferromagnetism in transition metal doped MoS2. Y Wang, LT Tseng, PP Murmu, N Bao, J Kennedy, M Ionesc, J Ding, ... Materials & Design 121, 77-84. , 2017. 109. 2017. Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor.
Li-Ting TSENG, Postdoctoral Fellow | Cited by 604 | of Paul Scherrer Institut, Villigen (PSI) | Read 38 publications | Contact Li-Ting TSENG
View Li-Ting Tseng’s profile on LinkedIn, the world’s largest professional community. Li-Ting has 3 jobs listed on their profile. See the complete profile on LinkedIn and discover...
May 4, 2020 · Proceedings Article | 4 May 2020. Progress in EUV resists status towards high-NA EUV lithography. Xiaolong Wang, Li-Ting Tseng, Timothee Allenet, Iacopo Mochi, Michaela Vockenhuber, Chia-Kai Yeh, Lidia van Lent-Protasova, Jara Garcia Santaclara, Rolf Custers, Yasin Ekinci. Proceedings Volume 11323, 113230C (2020) https://doi.org/10.1117/12.2551886.
EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
SPIE Profile of Li-Ting Tseng, Paul Scherrer Institut. SPIE Profiles is a networking platform for optics and photonics professionals.
1.000: Total i10 Index: 19 #243 #6,537 #221,738 #613,582
