Search results
Simon Min Sze, or Shi Min ( Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
Biography. Simon M. Sze (LF’77) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, the M.S. degree in electrical engineering from the University of Washington, Seattle, WA, USA, and the Ph.D. degree in electrical engineering from Stanford University, Stanford, CA, USA.
Remembering Dr. Simon Sze: A Seminal Figure in Semiconductor Technology, Mentor, and Visionary [Obituary] Abstract: Recounts the career and contributions of Simon Sze. Published in: IEEE Electron Devices Magazine ( Volume: 1 , Issue: 3 , December 2023 )
Simon SZE For his contributions to understanding carrier transports at the interface between metal and semiconductor, enabling Ohmic and Schottky-contact formations for scaling integrated circuits at the “Moore’s law” rate during the past five decades.
Dr. Simon M. Sze was born in Nanking, China in 1936. He received the B. S. degree from the National Taiwan University in 1957, M. S. from the University of Washington in 1960, and Ph. D. from Stanford University in 1963, all in Electrical Engineering.
Nov 8, 2023 · Dr. Simon Min Sze, a semiconductor physics visionary most notable for his contributions to the invention of the world's first floating-gate metal-oxide-semiconductor field-effect transistor...
Dr. Simon M. Sze was born in Nanking, China in 1936. He received the B. S. degree from the National Taiwan University in 1957, M. S. from the University of Washington in 1960, and Ph. D. from Stanford University in 1963, all in Electrical Engineering.
