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Robert Heath Dennard (September 5, 1932 – April 23, 2024) was an American electrical engineer and inventor. [1] Biography. Dennard was born in Terrell, Texas. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively.
May 23, 2024 · Robert H. Dennard was an American engineer credited with the invention of the one-transistor cell for dynamic random-access memory (DRAM) and with pioneering the set of consistent scaling principles that underlie the improved performance of increasingly miniaturized integrated circuits.
May 16, 2024 · Robert H. Dennard, an engineer who invented the silicon memory technology that plays an indispensable role in every smartphone, laptop and tablet computer, died on April 23 in Sleepy...
Robert Dennard was a renowned electrical engineer who invented dynamic random-access memory (DRAM), the memory cell behind billions of devices. He also formulated Dennard scaling, a theory that predicted the performance and power efficiency of computer chips.
Jun 3, 2024 · Robert Dennard spent more than half a century working at one company: IBM. During his tenure at IBM, Dennard worked on a variety of advanced electronics projects; however, he’s best remembered for two major accomplishments: he invented the DRAM and was the first person to observe and formulate the advantageous scaling of speed and power…
May 21, 2024 · IBM research engineer Robert H. Dennard went home discouraged one evening in 1966. Another group in the company had made a presentation that showed how a system using ultrathin magnetic film...
Nov 7, 2019 · Learn how Dennard invented dynamic random-access memory (DRAM) in 1966 and developed the scaling theory that shaped the semiconductor industry. Read about his career, achievements and legacy at IBM and beyond.
