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Simon Min Sze, or Shi Min ( Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
施敏 （1936年3月21日—2023年11月6日 [註 1] [2] ），號 福佑 [3] ， 江蘇 吳江 [註 2] 震澤人 [4] ，生於 南京 [5] ，知名 半導體 學者， 中央研究院院士 ，曾任職於美國 貝爾實驗室 與 國立交通大學 電子工程系教授、 國立陽明交通大學 與 國立臺灣科技大學 的榮譽 ...
Nov 7, 2023 · Dr. Simon Sze, a visionary in the field of semiconductor physics and technology, and a renowned educator, passed away peacefully on November 6, 2023, at the age of 87. His remarkable...
Sze was awarded the 2021 Mathematics and Computer Science Prize for his pioneering contributions to inter-metal and semiconductor carrier transports. His discoveries established both the scientific basis and practical guidelines for implementing modern semiconductor devices, enabling the scaling of integrated circuits over the past half-century.
Remembering Dr. Simon Sze: A Seminal Figure in Semiconductor Technology, Mentor, and Visionary [Obituary] Abstract: Recounts the career and contributions of Simon Sze. Published in: IEEE Electron Devices Magazine ( Volume: 1 , Issue: 3 , December 2023 )
Nov 10, 2023 · To Miss and Send Our Highest Respects to Dr. Simon Sze (施敏院士) – A Pioneer and Teacher on Semiconductor Technologies for Participants of the Worldwide Semiconductor Industry in the Last 60 Years and in the future.
Simon SZE For his contributions to understanding carrier transports at the interface between metal and semiconductor, enabling Ohmic and Schottky-contact formations for scaling integrated circuits at the “Moore’s law” rate during the past five decades.
